New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Low frequency (LF) noise is a powerful and nondestructive technique for evaluating the oxide-semiconductor interface an effective tool in characterizing electronic device’s structure reliability. In this study, we present systematic analysis of striking abnormal 1/f behavior hot carrier induced defects highspeed polysilicon emitter bipolar transistors (PE-BJTs) SiGe HBTs. Here, comparative results before after degradation reveal that low spectra are not correlated with density distribution interfacial defects, which related to Si dangling bonds reside at SiO2/Si PE-BJTs